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| MMDT4403 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching C2 SOT-363 A B1 E1 Dim A B BC C1 Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 Mechanical Data * * * * * Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K2T Weight: 0.006 grams (approx.) E2 KXX B2 C D F H J M 0.65 Nominal H K K L M J D F L All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Note: Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMDT4403 -40 -40 -5.0 -600 200 625 -55 to +150 Unit V V V mA mW K/W C 1. Valid provided that terminals are kept at ambient temperature. 2. Maximum combined dissipation. DS30110 Rev. 3P-1 1 of 3 MMDT4403 Electrical Characteristics @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 3/4 3/4 30 60 100 100 20 3/4 -0.75 3/4 3/4 3/4 1.5 0.1 60 1.0 200 Max 3/4 3/4 3/4 -100 -100 3/4 3/4 3/4 300 3/4 -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 3/4 Unit V V V nA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain hFE 3/4 Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 Ccb Ceb hie hre hfe hoe fT pF pF kW x 10-4 3/4 mS MHz VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz td tr ts tf 3/4 3/4 3/4 3/4 15 20 225 30 ns ns ns ns VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Note: 3. Pulse test: Pulse width 300ms, duty cycle 2%. DS30110 Rev. 3P-1 2 of 3 MMDT4403 30 NEW PRODUCT 20 Cibo CAPACITANCE (pF) 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 REVERSE VOLTS (V) Fig. 1 Capacitances (Typical) VCE COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 1 IC = 1mA IC = 30mA IC = 10mA IC = 100mA IC = 300mA 0.01 0.1 10 100 IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region DS30110 Rev. 3P-1 3 of 3 MMDT4403 |
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